Homogeneous pinhole free 1 nm Al{sub 2}O{sub 3} tunnel barriers on graphene
- Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau (France) and University of Paris-Sud, 91405 Orsay (France)
We report on the topographical and electrical characterisations of 1 nm thick Al{sub 2}O{sub 3} dielectric films on graphene. The Al{sub 2}O{sub 3} is grown by sputtering a 0.6 nm Al layer on graphene and subsequentially oxidizing it in an O{sub 2} atmosphere. The Al{sub 2}O{sub 3} layer presents no pinholes and is homogeneous enough to act as a tunnel barrier. A resistance-area product in the mega-ohm micrometer-square range is found. Comparatively, the growth of Al{sub 2}O{sub 3} by evaporation does not lead to well-wetted films on graphene. Application of this high quality sputtered tunnel barrier to efficient spin injection in graphene is discussed.
- OSTI ID:
- 22089512
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 20 Vol. 101; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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