Are Al{sub 2}O{sub 3} and MgO tunnel barriers suitable for spin injection in graphene?
- Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau (France) and University of Paris-Sud 11, 91405 Orsay (France)
- Thales Research and Technology, 91767 Palaiseau (France)
We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al{sub 2}O{sub 3} and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al{sub 2}O{sub 3} growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.
- OSTI ID:
- 21466912
- Journal Information:
- Applied Physics Letters, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.3476339; (c) 2010 American Institute of Physics; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM OXIDES
AMORPHOUS STATE
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DEPOSITION
EFFICIENCY
FULLERENES
LAYERS
MAGNESIUM OXIDES
RAMAN SPECTRA
RAMAN SPECTROSCOPY
SPIN
SPUTTERING
TUNNEL EFFECT
ALKALINE EARTH METAL COMPOUNDS
ALUMINIUM COMPOUNDS
ANGULAR MOMENTUM
CARBON
CHALCOGENIDES
ELEMENTS
LASER SPECTROSCOPY
MAGNESIUM COMPOUNDS
NONMETALS
OXIDES
OXYGEN COMPOUNDS
PARTICLE PROPERTIES
SPECTRA
SPECTROSCOPY