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Title: Are Al{sub 2}O{sub 3} and MgO tunnel barriers suitable for spin injection in graphene?

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.3476339· OSTI ID:21466912
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  1. Unite Mixte de Physique CNRS/Thales, 91767 Palaiseau (France) and University of Paris-Sud 11, 91405 Orsay (France)
  2. Thales Research and Technology, 91767 Palaiseau (France)

We report on the structural impact on graphene and multi-layers graphene of the growth by sputtering of tunnel barriers. Sputtered Al{sub 2}O{sub 3} and MgO barriers were chosen for their well-known efficiency as spin injectors in spintronics devices. The impact of the growth on the structure of graphene and up to 4-layer flakes was analyzed by Raman spectroscopy. This study reveals that for Al{sub 2}O{sub 3} growth, the impact is moderate for a monolayer and decreases sharply for bilayers and above. In the case of MgO all the flakes underwent a strong amorphization. Moreover, this reveals that while single layer graphene is believed to offer the best spin transport properties, the better robustness of multilayer graphene may ultimately make it a better choice for spintronics devices.

OSTI ID:
21466912
Journal Information:
Applied Physics Letters, Vol. 97, Issue 9; Other Information: DOI: 10.1063/1.3476339; (c) 2010 American Institute of Physics; ISSN 0003-6951
Country of Publication:
United States
Language:
English