InAs/GaAs p-type quantum dot infrared photodetector with higher efficiency
- Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
- Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)
An InAs/GaAs quantum dot infrared photodetector (QDIP) based on p-type valence-band intersublevel hole transitions as opposed to conventional electron transitions is reported. Two response bands observed at 1.5–3 and 3–10 μm are due to transitions from the heavy-hole to spin-orbit split-off QD level and from the heavy-hole to heavy-hole level, respectively. Without employing optimized structures (e.g., the dark current blocking layer), the demonstrated QDIP displays promising characteristics, including a specific detectivity of 1.8×10{sup 9} cm·Hz{sup 1/2}/W and a quantum efficiency of 17%, which is about 5% higher than that of present n-type QDIPs. This study shows the promise of utilizing hole transitions for developing QDIPs.
- OSTI ID:
- 22253772
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 24 Vol. 103; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Electronic states of InAs/GaAs quantum dots by scanning tunneling spectroscopy
Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots