Study of valence-band intersublevel transitions in InAs/GaAs quantum dots-in-well infrared photodetectors

Journal Article · Mon Apr 28 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4875239· OSTI ID:22267699

Lao, Yan-Feng; Wolde, Seyoum; Zhang, Y. H.; Wang, T. M. ^[1]; Kim, J. O.; Schuler-Sandy, Ted; Tian, Zhao-Bing; Krishna, S. S. ^[2]

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1. Key Laboratory of Artificial Structures and Quantum Control, Department of Physics and Astronomy, Shanghai Jiao Tong University, Shanghai 200240 (China)
2. Center for High Technology Materials, Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87106 (United States)

The n-type quantum dot (QD) and dots-in-well (DWELL) infrared photodetectors, in general, display bias-dependent multiple-band response as a result of optical transitions between different quantum levels. Here, we present a unique characteristic of the p-type hole response, a well-preserved spectral profile, due to the much reduced tunneling probability of holes compared to electrons. This feature remains in a DWELL detector, with the dominant transition contributing to the response occurring between the QD ground state and the quantum-well states. The bias-independent response will benefit applications where single-color detection is desired and also allows achieving optimum performance by optimizing the bias.

• OSTI ID: 22267699
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 17 Vol. 104; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRONS
GALLIUM ARSENIDES
GROUND STATES
INDIUM ARSENIDES
PHOTODETECTORS
QUANTUM DOTS
QUANTUM WELLS
TUNNEL EFFECT