Dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots

Journal Article · Sat Jan 03 04:00:00 EST 2004 · Materials Research Bulletin

DOI:https://doi.org/10.1016/j.materresbull.2003.07.013· OSTI ID:20888010

Lee, Chang Yun; Song, Jin Dong; Kim, Jong Min; Chang, Ki Soo; Lee, Yong Tak; Kim, Tae Whan

Temperature-dependent photoluminescence (PL) measurements have been carried out to investigate the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs quantum dots (QDs). The PL spectra showed that the peak corresponding to the interband transitions form the ground electronic subband to the ground heavy-hole band (E{sub 0}-HH{sub 1}) of the InAs QDs shifted to a higher energy side with increasing the GaAs spacer thickness and that the full width at maximum (FWHM) of the (E{sub 0}-HH{sub 1}) peak rapidly decreased with increasing a spacer thickness. The position energy and the FWHM of the (E{sub 0}-HH{sub 1}) peak for the InAs/GaAs QDs at several temperatures were observed. The present observations can help improve understanding of the dependence of the optical properties on the GaAs spacer thickness for vertically stacked InAs/GaAs QDs.

• OSTI ID: 20888010
• Journal Information: Materials Research Bulletin, Journal Name: Materials Research Bulletin Journal Issue: 1 Vol. 39; ISSN MRBUAC; ISSN 0025-5408
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
EPITAXY
GALLIUM ARSENIDES
HOLES
INDIUM ARSENIDES
OPTICAL PROPERTIES
PHOTOLUMINESCENCE
QUANTUM DOTS
SPACERS
TEMPERATURE DEPENDENCE
THICKNESS