Continuously-tuned tunneling behaviors of ferroelectric tunnel junctions based on BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} heterostructure

Journal Article · Thu May 15 00:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4876234· OSTI ID:22252873

Ou, Xin; Xu, Bo; Yin, Qiaonan; Xia, Yidong; Yin, Jiang; Liu, Zhiguo ^[1]; Gong, Changjie; Lan, Xuexin ^[2]

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1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

In this work, we fabricate BaTiO{sub 3}/La{sub 0.67}Sr{sub 0.33}MnO{sub 3} (BTO/LSMO) ferroelectric tunnel junction on (001) SrTiO{sub 3} substrate by pulsed laser deposition method. Combining piezoresponse force and conductive-tip atomic force microscopy, we demonstrate robust and reproducible polarization-controlled tunneling behaviors with the resulting tunneling electroresistance value reaching about 10{sup 2} in ultrathin BTO films (∼1.2 nm) at room temperature. Moreover, local poling areas with different conductivity are finally achieved by controlling the relative proportion of upward and downward domains, and different poling areas exhibit stable transport properties.

• OSTI ID: 22252873
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 5 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
ENERGY BEAM DEPOSITION
FERROELECTRIC MATERIALS
FILMS
LASER RADIATION
POLARIZATION
PULSED IRRADIATION
STRONTIUM TITANATES
SUBSTRATES
TUNNEL EFFECT