Charge carrier relaxation model in disordered organic semiconductors
- Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029 (China)
The relaxation phenomena of charge carrier in disordered organic semiconductors have been demonstrated and investigated theoretically. An analytical model describing the charge carrier relaxation is proposed based on the pure hopping transport theory. The relation between the material disorder, electric field and temperature and the relaxation phenomena has been discussed in detail, respectively. The calculated results reveal that the increase of electric field and temperature can promote the relaxation effect in disordered organic semiconductors, while the increase of material disorder will weaken the relaxation. The proposed model can explain well the stretched-exponential law by adopting the appropriate parameters. The calculation shows a good agreement with the experimental data for organic semiconductors.
- OSTI ID:
- 22251822
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 11 Vol. 3; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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