Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

Mkhitaryan, V. V.; Dobrovitski, V. V.

doi:10.1103/PhysRevB.92.054204

Hyperfine-induced spin relaxation of a diffusively moving carrier in low dimensions: Implications for spin transport in organic semiconductors

Journal Article · Mon Aug 24 00:00:00 EDT 2015 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.92.054204· OSTI ID:1227418

Mkhitaryan, V. V. ^[1]; Dobrovitski, V. V. ^[1]

Iowa State Univ., Ames, IA (United States)

The hyperfine coupling between the spin of a charge carrier and the nuclear spin bath is a predominant channel for the carrier spin relaxation in many organic semiconductors. We theoretically investigate the hyperfine-induced spin relaxation of a carrier performing a random walk on a d-dimensional regular lattice, in a transport regime typical for organic semiconductors. We show that in d=1 and 2, the time dependence of the space-integrated spin polarization P(t) is dominated by a superexponential decay, crossing over to a stretched-exponential tail at long times. The faster decay is attributed to multiple self-intersections (returns) of the random-walk trajectories, which occur more often in lower dimensions. We also show, analytically and numerically, that the returns lead to sensitivity of P(t) to external electric and magnetic fields, and this sensitivity strongly depends on dimensionality of the system (d=1 versus d=3). We investigate in detail the coordinate dependence of the time-integrated spin polarization σ(r), which can be probed in the spin-transport experiments with spin-polarized electrodes. We also demonstrate that, while σ(r) is essentially exponential, the effect of multiple self-intersections can be identified in transport measurements from the strong dependence of the spin-decay length on the external magnetic and electric fields.

View Accepted Manuscript (DOE)

Research Organization:: Ames Laboratory (AMES), Ames, IA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: AC02-07CH11358

OSTI ID:: 1227418

Alternate ID(s):: OSTI ID: 1212951

Report Number(s):: IS-J--8823

Journal Information:: Physical Review. B, Condensed Matter and Materials Physics, Journal Name: Physical Review. B, Condensed Matter and Materials Physics Journal Issue: 5 Vol. 92; ISSN 1098-0121; ISSN PRBMDO

Publisher:: American Physical Society (APS)Copyright Statement

Country of Publication:: United States

Language:: English

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Cited By (2)

Magnetoresistance in organic semiconductors: Including pair correlations in the kinetic equations for hopping transport Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I. Physical Review B, Vol. 97, Issue 9 https://doi.org/10.1103/physrevb.97.094201	journal	March 2018
Magnetoresistance in organic semiconductors: including pair correlations in the kinetic equations for hopping transport Shumilin, A. V.; Kabanov, V. V.; Dediu, V. I. arXiv https://doi.org/10.48550/arxiv.1802.07921	text	January 2018

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