Charge carrier coherence and Hall effect in organic semiconductors

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

doi:10.1038/srep23650

Charge carrier coherence and Hall effect in organic semiconductors

Journal Article · Wed Mar 30 00:00:00 EDT 2016 · Scientific Reports

DOI:https://doi.org/10.1038/srep23650· OSTI ID:1255122

Yi, H. T. ^[1]; Gartstein, Y. N. ^[2]; Podzorov, V. ^[3]

Rutgers Univ., Piscataway, NJ (United States); Rutgers University
Univ. of Texas at Dallas, Richardson, TX (United States)
Rutgers Univ., Piscataway, NJ (United States)

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

View Accepted Manuscript (DOE)

Research Organization:: Univ. of Texas at Dallas, Richardson, TX (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)

Grant/Contract Number:: SC0010697

OSTI ID:: 1255122

Journal Information:: Scientific Reports, Journal Name: Scientific Reports Vol. 6; ISSN 2045-2322

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Charge carrier traps in organic semiconductors: a review on the underlying physics and impact on electronic devices Haneef, Hamna F.; Zeidell, Andrew M.; Jurchescu, Oana D. Journal of Materials Chemistry C, Vol. 8, Issue 3 https://doi.org/10.1039/c9tc05695e	journal	January 2020
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