Design and fabrication of a CMOS-compatible MHP gas sensor

Journal Article · Sat Mar 15 04:00:00 EDT 2014 · AIP Advances

DOI:https://doi.org/10.1063/1.4869616· OSTI ID:22250796

Li, Ying; Yu, Jun; Wu, Hao; Tang, Zhenan ^[1]

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1. College of Electronic Science and Technology, Dalian University of Technology, Dalian 116024 (China)

A novel micro-hotplate (MHP) gas sensor is designed and fabricated with a standard CMOS technology followed by post-CMOS processes. The tungsten plugging between the first and the second metal layer in the CMOS processes is designed as zigzag resistor heaters embedded in the membrane. In the post-CMOS processes, the membrane is released by front-side bulk silicon etching, and excellent adiabatic performance of the sensor is obtained. Pt/Ti electrode films are prepared on the MHP before the coating of the SnO{sub 2} film, which are promising to present better contact stability compared with Al electrodes. Measurements show that at room temperature in atmosphere, the device has a low power consumption of ∼19 mW and a rapid thermal response of 8 ms for heating up to 300 °C. The tungsten heater exhibits good high temperature stability with a slight fluctuation (<0.3%) in the resistance at an operation temperature of 300 °C under constant heating mode for 336 h, and a satisfactory temperature coefficient of resistance of about 1.9‰/°C.

• OSTI ID: 22250796
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 3 Vol. 4; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ELECTRODES
FILMS
MEMBRANES
SENSORS
SILICON
STABILITY
TEMPERATURE COEFFICIENT
TIN OXIDES
TUNGSTEN