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Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor

Journal Article · · IEEE Electron Device Letters
DOI:https://doi.org/10.1109/55.491845· OSTI ID:231100
;  [1]
  1. Michigan State Univ., East Lansing, MI (United States). Dept. of Electrical Engineering
Heat generation and temperature sensing are required for heating applications and for liquid level sensors, mass flow meters, and vacuum and pressure gauges which are based on variations of heat dissipation. Heat generation and temperature sensing are reported in a single p-type diamond resistor fabricated on an oxidized Si substrate using diamond film technology compatible with integrated circuit (IC) processing. Power densities in excess of 600 W/in.{sup 2} are observed for the heaters. The temperature response of the sensor is characterized in the temperature range of 300--725 K. Such a diamond heater/sensor device is reported for the first time.
OSTI ID:
231100
Journal Information:
IEEE Electron Device Letters, Journal Name: IEEE Electron Device Letters Journal Issue: 5 Vol. 17; ISSN EDLEDZ; ISSN 0741-3106
Country of Publication:
United States
Language:
English

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