Electrical properties of scandium nitride epitaxial films grown on (100) magnesium oxide substrates by molecular beam epitaxy

Journal Article · Sat Sep 07 04:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4820391· OSTI ID:22218113

Ohgaki, Takeshi; Watanabe, Ken; Adachi, Yutaka; Sakaguchi, Isao; Hishita, Shunichi; Ohashi, Naoki; Haneda, Hajime ^[1]

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1. Environment and Energy Materials Research Division, National Institute for Materials Science, 1-1 Namiki, Tsukuba, Ibaraki 305-0044 (Japan)

Scandium nitride (ScN) films were grown on (100) MgO single crystals by a molecular beam epitaxy method. The effects of growth conditions, including [Sc]/[N] ratio, growth temperature, and nitrogen radical state, on the electrical properties of the ScN films were studied. The ScN films comprised many small columnar grains. Hall coefficient measurements confirmed that the ScN films were highly degenerate n-type semiconductors and that the carrier concentration of the ScN films was sensitive to the growth temperature and the nitrogen radical states during the film growth. The carrier concentrations of the ScN films ranged from 10{sup 19}–10{sup 21} cm{sup −3} while the Hall mobilities ranged from 50–130 cm{sup 2}·V{sup −1}·s{sup −1} for undoped films. The temperature-dependent Hall coefficient measurements showed that the carrier concentration is nearly independent of temperature, indicating that the change in resistivity with temperature is explained by a change in the Hall mobility. The temperature-dependence of the Hall mobility was strongly affected by the growth conditions.

• OSTI ID: 22218113
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CARRIER DENSITY
CARRIERS
ELECTRIC CONDUCTIVITY
FILMS
LAYERS
MAGNESIUM OXIDES
MOBILITY
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
NITROGEN
SCANDIUM
SCANDIUM NITRIDES
SEMICONDUCTOR MATERIALS
SUBSTRATES
TEMPERATURE DEPENDENCE