Electron mobility and carrier concentration of heteroepitaxial zinc selenide

Journal Article · Fri Jan 01 04:00:00 EST 1982 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.329959· OSTI ID:5691040

Leigh, W B; Besomi, P; Wessels, B W

The Hall mobility and carrier concentration have been measured on low-resistivity ZnSe epitaxial films in the temperature range of 77--300 K. Both undoped and indium doped materials were studied. Resistivities of the as-grown films varied from 10/sup -1/ to 10/sup 5/ ..cap omega.. cm. Electron mobility was of the order of 10--200 cm/sup 2/ V/sup -1/ s/sup -1/ and was limited by ionized-impurity scattering. Analysis of the temperature dependence of the carrier concentration and Hall mobility indicated that the n-type films were heavily compensated having acceptor concentrations N/sub A/>10/sup 18/ cm/sup -3/. It was found that the acceptor and donor concentrations were essentially independent of Zn/Se pressure ratio present during growth.

• Research Organization: Department of Materials Science and Engineering and Materials Research Center, Northwestern University, Evanston, Illinois 60201
• DOE Contract Number: AC02-79ER10390
• OSTI ID: 5691040
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 53:1; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
CARRIER DENSITY
CHALCOGENIDES
CHARGE CARRIERS
DATA
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MOBILITY
ELEMENTS
EPITAXY
EXPERIMENTAL DATA
FILMS
HALL EFFECT
IMPURITIES
INDIUM
INFORMATION
LOW TEMPERATURE
MATERIALS
MEDIUM TEMPERATURE
METALS
MOBILITY
N-TYPE CONDUCTORS
NUMERICAL DATA
PARTICLE MOBILITY
PHYSICAL PROPERTIES
SCATTERING
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
ZINC COMPOUNDS
ZINC SELENIDES