The role of impurities in LP-MOCVD grown gallium nitride

Book · Fri Nov 01 04:00:00 EST 1996

OSTI ID:394999

Hwang, C Y; Li, Y; Schurman, M J; Mayo, W E; Lu, Y ^[1]; Stall, R A ^[2]

---

1. Rutgers, The State Univ. of New Jersey, Piscataway, NJ (United States)
2. EMCORE Corp., Somerset, NJ (United States)

The authors have investigated the relationship of the Hall electron mobility to the background carrier concentration in low pressure MOCVD grown GaN. The highest electron mobility (400 cm{sup 2}/V{center_dot}s) of the unintentionally doped GaN was obtained at a carrier concentration of 1 {times} 10{sup 17} cm{sup {minus}3} and samples with carrier concentrations lower than this exhibited lower mobilities. SIMS analysis shows C and O concentrations in the range of 2--3 {times} 10{sup 16} cm{sup {minus}3} and H in the 2--3 {times} 10{sup 17} cm{sup {minus}3} range. Structural defects, stoichiometry and impurities in the GaN films grown under different conditions are investigated to understand their relationship to the electron Hall mobilities. In particular, different growth temperatures and pressures were used to grow undoped GaN and modify the background doping effect of the impurities.

• OSTI ID: 394999
• Report Number(s): CONF-951155--; ISBN 1-55899-298-7
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
AUGER ELECTRON SPECTROSCOPY
CARRIER DENSITY
CHEMICAL VAPOR DEPOSITION
DISLOCATIONS
ELECTRICAL PROPERTIES
EXPERIMENTAL DATA
GALLIUM NITRIDES
HALL EFFECT
IMPURITIES
ION MICROPROBE ANALYSIS
MASS SPECTROSCOPY
MICROSTRUCTURE
PRESSURE DEPENDENCE
RESIDUAL STRESSES
RUTHERFORD SCATTERING
SAMPLE PREPARATION
STOICHIOMETRY
STRAINS
TRANSMISSION ELECTRON MICROSCOPY