Effect of the substrate orientation on the formation of He-plates in Si

Journal Article · Thu Nov 21 04:00:00 EST 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4831659· OSTI ID:22217859

Vallet, M.; Barbot, J. F.; Declémy, A.; Beaufort, M. F. ^[1]; Reboh, S. ^[2]

---

1. Institut Pprime (UPR 3346), Department of Material Sciences, CNRS, Université de Poitiers, ENSMA, BP30179, 86962 Futuroscope Chasseneuil (France)
2. CEA-LETI, Minatec Campus, 17 rue des Martyrs, 38054 Grenoble (France)

The effect of the crystalline orientation on the implantation-induced strain/stress and on the formation of He-plates was studied by combining high-resolution X-ray scattering and transmission electron microscopy. The highest strains are obtained in (001)-oriented implanted substrates regardless of the fluence and of the channeling effects. The anisotropic properties of the silicon that generate an anisotropic elastic response of the substrate were taken into account to explain these different values of strain. Upon specific thermal annealing, it is shown that the formation of He-plates occurs only in the (001) habit planes regardless of the orientation of the substrates, non-tilted and tilted (001)-, (110)-, and (111)-substrates. Moreover, the distribution of He-plates in the (001) variants was found to be strongly dependent on the angle of the habit plane with the surface and on the intensity of the implantation-induced strain/stress. The implantation-induced stress thus favors the formation of He-plates in specific planes (of low angle with the surface) forming different defect configurations. The nucleation and growth of He-plates are thus discussed with regard to the implantation-induced stress.

• OSTI ID: 22217859
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CHANNELING
HELIUM
PLATES
RESIDUAL STRESSES
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION