In situ growth and coalescence of He-filled bi-dimensional defects in Si by H supply

Journal Article · Sat Jun 14 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4883766· OSTI ID:22304121

Vallet, M.; Beaufort, M. F. ^[1]; Oliviero, E. ^[2]; Donnelly, S. E.; Hinks, J. A. ^[3]

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1. Department of Material Sciences, Institut Pprime (UPR 3346), CNRS, Université de Poitiers, ENSMA, BP30179, 86962 Futuroscope Chasseneuil (France)
2. CSNSM, CNRS—Université Paris-Sud, Bâtiment 108, Orsay (France)
3. School of Computing and Engineering, University of Huddersfield, Huddersfield HD1 3DH (United Kingdom)

In this work, ion implantations with in situ transmission electron microscopy observations followed by different rates of temperature ramp were performed in (001)-Si to follow the evolution of He-plates under the influence of hydrogen. The JANNUS and MIAMI facilities were used to study the first stages of growth as well as the interactions between co-planar plates. Results showed that under a limited amount of H, the growth of He-plates resulting from a subcritical stress-corrosion mechanism can be fully described by the kinetic model of Johnson-Mehl-Avrami-Kolmogorov with effective activation energy of 0.9 eV. Elastic calculations showed that the sudden and non-isotropic coalescence of close He-plates occurs when the out-of-plane tensile stress between them is close to the yield strength of silicon. After hydrogen absorption, surface minimization of final structure occurs.

• OSTI ID: 22304121
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 22 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ACTIVATION ENERGY
COALESCENCE
CRYSTAL DEFECTS
CRYSTAL GROWTH
EV RANGE
HELIUM
HYDROGEN
INTERACTIONS
SILICON
STRESS CORROSION
STRESSES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
YIELD STRENGTH