Ordered growth of germanium hut islands on Si (001) molecular bonded substrates

Journal Article · Mon Dec 06 04:00:00 EST 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1829795· OSTI ID:20634503

Poydenot, V; Dujardin, R; Rouviere, J L; Barski, A; Fournel, F ^[1]

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1. DRFMC-SP2M, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)

Ordered germanium hut islands are grown by molecular-beam epitaxy on high twist angle molecular bonded silicon (001) substrates (twist angle higher than 20 deg.). We show that the growth organization is induced by an array of interfacial tilt dislocations. Plan-view transmission electron microscopy and atomic force microscopy observations show that the orientation and period of the tilt dislocation array determine the orientation, period, and length of elongated germanium hut islands. The strain field generated by an array of tilt dislocations is proposed as the driving force of the reported organization.

• OSTI ID: 20634503
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 85; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
CRYSTAL GROWTH
DISLOCATIONS
GERMANIUM
GRAIN ORIENTATION
LAYERS
MAGNETIC ISLANDS
MOLECULAR BEAM EPITAXY
SEMICONDUCTOR MATERIALS
SILICON
STRAINS
STRESSES
SUBSTRATES
TEXTURE
TRANSMISSION ELECTRON MICROSCOPY