Monolithic integration of InGaN segments emitting in the blue, green, and red spectral range in single ordered nanocolumns

Journal Article · Mon May 06 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4804293· OSTI ID:22162890

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E. ^[1]; Kong, X.; Trampert, A. ^[2]

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1. ISOM and Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
2. Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

This work reports on the selective area growth by plasma-assisted molecular beam epitaxy and characterization of InGaN/GaN nanocolumnar heterostructures. The optimization of the In/Ga and total III/V ratios, as well as the growth temperature, provides control on the emission wavelength, either in the blue, green, or red spectral range. An adequate structure tailoring and monolithic integration in a single nanocolumnar heterostructure of three InGaN portions emitting in the red-green-blue colors lead to white light emission.

• OSTI ID: 22162890
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 18 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CHEMICAL VAPOR DEPOSITION
COLOR
EMISSION
GALLIUM COMPOUNDS
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM COMPOUNDS
LIGHT EMITTING DIODES
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITROGEN COMPOUNDS
OPTIMIZATION
PLASMA
SEMICONDUCTOR MATERIALS
VISIBLE RADIATION
WAVELENGTHS