Emission control of InGaN nanocolumns grown by molecular-beam epitaxy on Si(111) substrates

Journal Article · Mon Sep 26 04:00:00 EDT 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3644986· OSTI ID:22027750

Albert, S; Bengoechea-Encabo, A; Sanchez-Garcia, M A; Calleja, E ^[1]; Lefebvre, P ^[1]; Jahn, U; Trampert, A ^[2]

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1. ISOM and Departamento de Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
2. Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

This work studies the effect of the growth temperature on the morphology and emission characteristics of self-assembled InGaN nanocolumns grown by plasma assisted molecular beam epitaxy. Morphology changes are assessed by scanning electron microscopy, while emission is measured by photoluminescence. Within the growth temperature range of 750 to 650 deg. C, an increase in In incorporation for decreasing temperature is observed. This effect allows tailoring the InGaN nanocolumns emission line shape by using temperature gradients during growth. Depending on the gradient rate, span, and sign, broad emission line shapes are obtained, covering the yellow to green range, even yielding white emission.

• OSTI ID: 22027750
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 99; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
GALLIUM NITRIDES
INDIUM COMPOUNDS
MOLECULAR BEAM EPITAXY
MORPHOLOGY
NANOSTRUCTURES
PHOTOLUMINESCENCE
PLASMA
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE GRADIENTS