Selective area growth and characterization of InGaN nanocolumns for phosphor-free white light emission

Journal Article · Thu Mar 21 04:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4796100· OSTI ID:22102312

Albert, S.; Bengoechea-Encabo, A.; Sanchez-Garcia, M. A.; Calleja, E. ^[1]; Jahn, U. ^[2]

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1. ISOM and Dept. Ingenieria Electronica, ETSI Telecomunicacion, Universidad Politecnica de Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)
2. Paul-Drude-Institut fuer Festkoeperelektronik, Hausvogteiplatz 5-7, 10117 Berlin (Germany)

This work reports on the morphology and light emission characteristics of ordered InGaN nanocolumns grown by plasma-assisted molecular beam epitaxy. Within the growth temperature range of 750 to 650 Degree-Sign C, the In incorporation can be modified either by the growth temperature, the In/Ga ratio, or the III/V ratio, following different mechanisms. Control of these factors allows the optimization of the InGaN nanocolumns light emission wavelength and line-shape. Furthermore, yellow-white emission is obtained at room temperature from nanostructures with a composition-graded active InGaN region obtained by temperature gradients during growth.

• OSTI ID: 22102312
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LUMINESCENCE
MOLECULAR BEAM EPITAXY
NANOSTRUCTURES
NITROGEN COMPOUNDS
PROCESSING
SEMICONDUCTOR MATERIALS
TEMPERATURE GRADIENTS
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS