Single domain Bi{sub 2}Se{sub 3} films grown on InP(111)A by molecular-beam epitaxy
- Department of Physics, The University of Hong Kong, Pokfulam Road (Hong Kong)
- Department of Physics, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon (Hong Kong)
- College of Physics and Information Engineering, Henan Normal University, Xinxiang, Henan 453007 (China)
We report the growth of single-domain epitaxial Bi{sub 2}Se{sub 3} films on InP(111)A substrate by molecular-beam epitaxy. Nucleation of Bi{sub 2}Se{sub 3} proceeds at steps, so the lattices of the substrate play the guiding role for a unidirectional crystalline film in the step-flow growth mode. There exists a strong chemical interaction between atoms at the heterointerface, so the growth does not follow the van der Waals epitaxy process. A mounded morphology of thick Bi{sub 2}Se{sub 3} epilayers suggests a growth kinetics dictated by the Ehrlich-Schwoebel barrier. The Schubnikov de Haas oscillations observed in magnetoresistance measurements are attributed to Landau quantization of the bulk states of electrons.
- OSTI ID:
- 22162843
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 15; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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