Epitaxial growth of the topological insulator Bi{sub 2}Se{sub 3} on Si(111): Growth mode, lattice parameter, and strain state

Journal Article · Mon Sep 09 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4821181· OSTI ID:22218051

Vyshnepolsky, M.; Klein, C.; Klasing, F.; Hanisch-Blicharski, A.; Horn-von Hoegen, M. ^[1]

---

1. Department of Physics and Center for Nanointegration CENIDE, University of Duisburg-Essen, Lotharstrasse 1, 47057 Duisburg (Germany)

Using spot profile analysis low energy electron diffraction, we studied the growth mode and strain state of ultra-thin epitaxial Bi{sub 2}Se{sub 3}(111) films grown by molecular beam epitaxy on Si(111). The first layer grows as complete quintuple layer and covers the Si substrate before the next layer nucleates. Its lateral lattice parameter is increased by 1% compared with the value of a{sub ‖} = 4.136 Å for a 6-nm-thick film. With increasing film thickness, a continuous change of the lattice parameter is observed to an asymptotic value, which is explained by a van der Waals-like bonding between the Bi{sub 2}Se{sub 3} film and the Si substrate.

• OSTI ID: 22218051
• Journal Information: Applied Physics Letters, Vol. 103, Issue 11; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH SELENIDES
ELECTRON DIFFRACTION
FILMS
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
SOCIO-ECONOMIC FACTORS
STRAINS
SUBSTRATES
THICKNESS
TOPOLOGY
VAN DER WAALS FORCES