Domain formation due to surface steps in topological insulator Bi{sub 2}Te{sub 3} thin films grown on Si (111) by molecular beam epitaxy

Journal Article · Mon Aug 19 00:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4818456· OSTI ID:22218129

Borisova, S.; Kampmeier, J.; Mussler, G.; Grützmacher, D. ^[1]; Luysberg, M. ^[2]

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1. Peter Grünberg Institute-9, Forschungszentrum Jülich, Jülich 52425 (Germany)
2. Peter Grünberg Institute-5 and Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons, Forschungszentrum Jülich, Jülich 52425 (Germany)

The atomic structure of topological insulators Bi{sub 2}Te{sub 3} thin films on Si (111) substrates grown in van der Waals mode by molecular beam epitaxy has been investigated by in situ scanning tunneling microscopy and scanning transmission electron microscopy. Besides single and multiple quintuple layer (QL) steps, which are typical for the step-flow mode of growth, a number of 0.4 QL steps is observed. We determine that these steps originate from single steps at the substrate surface causing domain boundaries in the Bi{sub 2}Te{sub 3} film. Due to the peculiar structure of these domain boundaries the domains are stable and penetrate throughout the entire film.

• OSTI ID: 22218129
• Journal Information: Applied Physics Letters, Vol. 103, Issue 8; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BISMUTH TELLURIDES
MOLECULAR BEAM EPITAXY
SCANNING TUNNELING MICROSCOPY
SUBSTRATES
SURFACES
THIN FILMS
TOPOLOGY
TRANSMISSION ELECTRON MICROSCOPY
VAN DER WAALS FORCES