Molecular beam epitaxy of high structural quality Bi{sub 2}Se{sub 3} on lattice matched InP(111) substrates

Journal Article · Mon Jan 28 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4789775· OSTI ID:22162697

Schreyeck, S.; Tarakina, N. V.; Schumacher, C.; Borzenko, T.; Bruene, C.; Buhmann, H.; Gould, C.; Brunner, K.; Molenkamp, L. W. ^[1]; Karczewski, G. ^[1]

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1. Physikalisches Institut, Experimentelle Physik III, Universitaet Wuerzburg, Am Hubland, D-97074 Wuerzburg (Germany)

Epitaxial layers of the topological insulator Bi{sub 2}Se{sub 3} have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi{sub 2}Se{sub 3} crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is {Delta}{omega}=13 arc sec, and the ({omega}-2{theta}) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy.

• OSTI ID: 22162697
• Journal Information: Applied Physics Letters, Vol. 102, Issue 4; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
BISMUTH SELENIDES
COMPARATIVE EVALUATIONS
CRYSTALS
DEPOSITS
LAYERS
MOLECULAR BEAM EPITAXY
RESOLUTION
SUBSTRATES
THICKNESS
TOPOLOGY
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION