Quasi-two-dimensional conducting layer on TiO{sub 2} (110) introduced by sputtering as a template for resistive switching

Journal Article · Mon Apr 01 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4801437· OSTI ID:22162825

Rogala, M. ^[1]; Klusek, Z. ^[2]; Rodenbuecher, C. ^[1]; Waser, R. ^[1]; Szot, K. ^[1]

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1. Peter Gruenberg Institute and JARA-FIT, Forschungszentrum Juelich, 52425 Juelich (Germany)
2. Division of Physics and Technology of Nanometre Structures, Faculty of Physics and Applied Informatics, University of Lodz, 90-236 Lodz, Pomorska 149/153 (Poland)

The insulator-to-metal transformation in the surface layer of TiO{sub 2} (110) induced by the Ar{sup +} ion sputtering process is analyzed on the nanoscale. Local conductivity atomic force microscopy and photoelectron spectroscopy allow the changes in the valence of the Ti ions in the surface layer to be linked to the formation of its grain-like structure. The investigation of the cleavage plane of the crystal allowed us to estimate the thickness of the quasi-two-dimensional conducting layer generated by ion bombardment as 30 nm. The conducting layer is a template where the resistive switching of each single grain can be carried out.

• OSTI ID: 22162825
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 13 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ARGON IONS
ATOMIC FORCE MICROSCOPY
CLEAVAGE
CRYSTALS
ION BEAMS
LAYERS
METALS
NANOSTRUCTURES
PHOTOELECTRON SPECTROSCOPY
SPUTTERING
SURFACES
THICKNESS
TITANIUM IONS
TITANIUM OXIDES
TRANSFORMATIONS
TWO-DIMENSIONAL CALCULATIONS