Carrier localization and in-situ annealing effect on quaternary Ga{sub 1-x}In{sub x}As{sub y}Sb{sub 1-y}/GaAs quantum wells grown by Sb pre-deposition

Journal Article · Mon Mar 18 04:00:00 EDT 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4795866· OSTI ID:22162802

Thoma, Jiri; Huyet, Guillaume ^[1]; Liang, Baolai; Huffaker, Diana L. ^[2]; Lewis, Liam ^[1]; Hegarty, Stephen P. ^[3]

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1. Centre for Advanced Photonics and Process Analysis, Cork Institute of Technology (Ireland)
2. Department of Electrical Engineering, California NanoSystems Institute, UCLA, Los Angeles, California 90095 (United States)
3. Tyndall National Institute, UCC, Lee Maltings, Cork (Ireland)

Using temperature-dependent photoluminescence spectroscopy, we have investigated and compared intrinsic InGaAs, intrinsic GaInAsSb, and p-i-n junction GaInAsSb quantum wells (QWs) embedded in GaAs barriers. Strong carrier localization inside the intrinsic GaInAsSb/GaAs QW has been observed together with its decrease inside the p-i-n sample. This is attributed to the effect of an in-situ annealing during the top p-doped AlGaAs layer growth at an elevated temperature of 580 Degree-Sign C, leading to Sb-atom diffusion and even atomic redistribution. High-resolution X-ray diffraction measurements and the decrease of both maximum localization energy and full delocalization temperature in the p-i-n QW sample further corroborated this conclusion.

• OSTI ID: 22162802
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 102; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
ANNEALING
ANTIMONY COMPOUNDS
ARSENIC COMPOUNDS
CARRIERS
DIFFUSION
DOPED MATERIALS
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
LAYERS
MOLECULAR BEAM EPITAXY
P-N JUNCTIONS
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
X-RAY DIFFRACTION
X-RAY SPECTROSCOPY