Characteristic of rapid thermal annealing on GaIn(N)(Sb)As/GaAs quantum well grown by molecular-beam epitaxy

Journal Article · Wed Feb 01 04:00:00 EST 2006 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.2164539· OSTI ID:20787871

Zhao, H; Xu, Y Q; Ni, H Q; Zhang, S Y; Wu, D H; Han, Q; Wu, R H; Niu, Z C ^[1]

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1. National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Science, P.O. Box 912, Beijing 100083 (China)

Effect of rapid thermal annealing on photoluminescence (PL) properties of InGaAs, InGaNAs, InGaAsSb, and InGaNAsSb quantum wells (QWs) grown by molecular-beam epitaxy was systematically investigated. Variations of PL intensity and full width at half maximum were recorded from the samples annealed at different conditions. The PL peak intensities of InGaAs and InGaNAs QWs initially increase and then decrease when the annealing temperature increased from 600 to 900 deg. C, but the drawing lines of InGaAsSb and InGaNAsSb take on an 'M' shape. The enhancement of the PL intensity and the decrease of the full width at half maximum in our samples are likely due to the removal of defects and dislocations as well as the composition's homogenization. In the 800-900 deg. C high-temperature region, interdiffusion is likely the main factor influencing the PL intensity. In-N is easily formed during annealing which will prevent In out diffusion, so the largest blueshift was observed in InGaAsSb in the high-temperature region.

• OSTI ID: 20787871
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 3 Vol. 99; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANNEALING
CRYSTAL GROWTH
DISLOCATIONS
GALLIUM ANTIMONIDES
GALLIUM ARSENIDES
GALLIUM NITRIDES
INDIUM ANTIMONIDES
INDIUM ARSENIDES
INDIUM NITRIDES
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0400-1000 K
TEMPERATURE RANGE 1000-4000 K