Long wavelength (>1.55 {mu}m) room temperature emission and anomalous structural properties of InAs/GaAs quantum dots obtained by conversion of In nanocrystals

Journal Article · Mon Feb 18 00:00:00 EST 2013 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4792700· OSTI ID:22162750

Urbanczyk, A.; Keizer, J. G.; Koenraad, P. M. ^[1]; Noetzel, R. ^[2]

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1. COBRA Research Institute on Communication Technology, Department of Applied Physics, Eindhoven University of Technology, 5600 MB Eindhoven (Netherlands)
2. Institute for Systems Based on Optoelectronics and Microtechnology (ISOM), ETSI Telecommunication, Technical University of Madrid, Ciudad Universitaria s/n, 28040 Madrid (Spain)

We demonstrate that molecular beam epitaxy-grown InAs quantum dots (QDs) on (100) GaAs obtained by conversion of In nanocrystals enable long wavelength emission in the InAs/GaAs material system. At room temperature they exhibit a broad photoluminescence band that extends well beyond 1.55 {mu}m. We correlate this finding with cross-sectional scanning tunneling microscopy measurements. They reveal that the QDs are composed of pure InAs which is in agreement with their long-wavelength emission. Additionally, the measurements reveal that the QDs have an anomalously undulated top surface which is very different to that observed for Stranski-Krastanow grown QDs.

• OSTI ID: 22162750
• Journal Information: Applied Physics Letters, Vol. 102, Issue 7; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CONVERSION
GALLIUM ARSENIDES
INDIUM ARSENIDES
LAYERS
MOLECULAR BEAM EPITAXY
PHOTOLUMINESCENCE
QUANTUM DOTS
SCANNING TUNNELING MICROSCOPY
SEMICONDUCTOR MATERIALS
SURFACES
TEMPERATURE RANGE 0273-0400 K
WAVELENGTHS