Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions
- NRNU 'Moscow Engineering Physics Institute,' 115409 Moscow (Russian Federation)
- Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region (Russian Federation)
- Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation)
- Deutsches Elektronen-Synchrotron DESY, D-22603 Hamburg (Germany)
Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO{sub 3}(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO{sub 3}/Pt junctions with a sub-{mu}m Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of {approx}30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO{sub 3}/Pt (Cr/BaTiO{sub 3}) interface +0.42(-0.03) eV following downward to upward polarization reversal.
- OSTI ID:
- 22162737
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 6; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BARIUM COMPOUNDS
CHROMIUM
ELECTRIC CONDUCTIVITY
ENERGY GAP
EV RANGE
FERROELECTRIC MATERIALS
HARD X RADIATION
INTERFACES
LAYERS
PHOTOEMISSION
PLATINUM
POLARIZATION
SUPERCONDUCTING JUNCTIONS
TITANATES
TUNNEL EFFECT
X-RAY PHOTOELECTRON SPECTROSCOPY