Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions

doi:https://doi.org/10.1063/1.4792525

Title: Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions

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Abstract

Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO{sub 3}(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO{sub 3}/Pt junctions with a sub-{mu}m Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of {approx}30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO{sub 3}/Pt (Cr/BaTiO{sub 3}) interface +0.42(-0.03) eV following downward to upward polarization reversal.

Authors:

Zenkevich, A. ^[1]; Minnekaev, M.; Matveyev, Yu.; Lebedinskii, Yu. ^[1]; Bulakh, K.; Chouprik, A.; Baturin, A. ^[2]; Maksimova, K. ^[3]; Thiess, S.; Drube, W. ^[4]

NRNU 'Moscow Engineering Physics Institute,' 115409 Moscow (Russian Federation)
Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region (Russian Federation)
Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation)
Deutsches Elektronen-Synchrotron DESY, D-22603 Hamburg (Germany)

Publication Date:: 2013-02-11

OSTI Identifier:: 22162737

Resource Type:: Journal Article

Journal Name:: Applied Physics Letters

Additional Journal Information:: Journal Volume: 102; Journal Issue: 6; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951

Country of Publication:: United States

Language:: English

Subject:: 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BARIUM COMPOUNDS; CHROMIUM; ELECTRIC CONDUCTIVITY; ENERGY GAP; EV RANGE; FERROELECTRIC MATERIALS; HARD X RADIATION; INTERFACES; LAYERS; PHOTOEMISSION; PLATINUM; POLARIZATION; SUPERCONDUCTING JUNCTIONS; TITANATES; TUNNEL EFFECT; X-RAY PHOTOELECTRON SPECTROSCOPY

Citation Formats


                    Zenkevich, A., Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Minnekaev, M., Matveyev, Yu., Lebedinskii, Yu., Bulakh, K., Chouprik, A., Baturin, A., Maksimova, K., Thiess, S., and Drube, W. Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions.  United States: N. p., 2013. 
        Web.  doi:10.1063/1.4792525.

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                    Zenkevich, A., Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Minnekaev, M., Matveyev, Yu., Lebedinskii, Yu., Bulakh, K., Chouprik, A., Baturin, A., Maksimova, K., Thiess, S., & Drube, W. Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions.  United States.  https://doi.org/10.1063/1.4792525

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                    Zenkevich, A., Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region, Minnekaev, M., Matveyev, Yu., Lebedinskii, Yu., Bulakh, K., Chouprik, A., Baturin, A., Maksimova, K., Thiess, S., and Drube, W. Mon .  
        "Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions".  United States.  https://doi.org/10.1063/1.4792525.

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@article{osti_22162737,

  title        = {Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions},

  author       = {Zenkevich, A. and Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region and Minnekaev, M. and Matveyev, Yu. and Lebedinskii, Yu. and Bulakh, K. and Chouprik, A. and Baturin, A. and Maksimova, K. and Thiess, S. and Drube, W.},

  abstractNote = {Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO{sub 3}(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO{sub 3}/Pt junctions with a sub-{mu}m Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of {approx}30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO{sub 3}/Pt (Cr/BaTiO{sub 3}) interface +0.42(-0.03) eV following downward to upward polarization reversal.},

  doi          = {10.1063/1.4792525},

  url          = {https://www.osti.gov/biblio/22162737},
  journal      = {Applied Physics Letters},

  issn         = {0003-6951},

  number       = 6,

  volume       = 102,

  place        = {United States},

  year         = {2013},

  month        = {2}

}

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