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Title: Electronic band alignment and electron transport in Cr/BaTiO{sub 3}/Pt ferroelectric tunnel junctions

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4792525· OSTI ID:22162737
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  1. NRNU 'Moscow Engineering Physics Institute,' 115409 Moscow (Russian Federation)
  2. Moscow Institute of Physics and Technology, Dolgoprudny, Moscow Region (Russian Federation)
  3. Immanuel Kant Baltic Federal University, 236041 Kaliningrad (Russian Federation)
  4. Deutsches Elektronen-Synchrotron DESY, D-22603 Hamburg (Germany)

Electroresistance in ferroelectric tunnel junctions is controlled by changes in the electrostatic potential profile across the junction upon polarization reversal of the ultrathin ferroelectric barrier layer. Here, hard X-ray photoemission spectroscopy is used to reconstruct the electric potential barrier profile in as-grown Cr/BaTiO{sub 3}(001)/Pt(001) heterostructures. Transport properties of Cr/BaTiO{sub 3}/Pt junctions with a sub-{mu}m Cr top electrode are interpreted in terms of tunneling electroresistance with resistance changes of a factor of {approx}30 upon polarization reversal. By fitting the I-V characteristics with the model employing an experimentally determined electric potential barrier we derive the step height changes at the BaTiO{sub 3}/Pt (Cr/BaTiO{sub 3}) interface +0.42(-0.03) eV following downward to upward polarization reversal.

OSTI ID:
22162737
Journal Information:
Applied Physics Letters, Vol. 102, Issue 6; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English