Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InN{sub x}As{sub 1-x}/InP (001)
- Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, Pennsylvania 15705-1087 (United States)
- Department of Physics, National Taiwan Normal University, Taipei 106-11, Taiwan (China)
- Institute of Photonics and Optoelectronics, Department of Electrical Engineering and Center for Engineering Material and Advanced Devices National Taiwan University, Taipei 106-17, Taiwan (China)
Vibrational spectra of gas-source molecular beam epitaxy grown dilute InN{sub x}As{sub 1-x}/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate N{sub As} local vibrational mode of T{sub d}-symmetry is observed near 438 cm{sup -1} corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the N{sub As} local mode into a doublet for the N{sub As}-Ga{sub 1}(In{sub 1})In{sub 3}(Ga{sub 3}) pair-defect of C{sub 3v}-symmetry is consistent with our simulated results based on a sophisticated Green's function theory.
- OSTI ID:
- 22162726
- Journal Information:
- Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION SPECTROSCOPY
ALLOYS
BINDING ENERGY
CRYSTAL DEFECTS
FOURIER TRANSFORMATION
GREEN FUNCTION
INDIUM PHOSPHIDES
INFRARED SPECTRA
INTERACTIONS
LAYERS
MOLECULAR BEAM EPITAXY
PHONONS
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SIMULATION
SYMMETRY
X-RAY SPECTROSCOPY