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Title: Infrared reflectivity spectra of gas-source molecular beam epitaxy grown dilute InN{sub x}As{sub 1-x}/InP (001)

Journal Article · · Applied Physics Letters
DOI:https://doi.org/10.1063/1.4790605· OSTI ID:22162726
 [1];  [2]; ;  [3]
  1. Department of Physics, Indiana University of Pennsylvania, 975 Oakland Avenue, 56 Weyandt Hall, Indiana, Pennsylvania 15705-1087 (United States)
  2. Department of Physics, National Taiwan Normal University, Taipei 106-11, Taiwan (China)
  3. Institute of Photonics and Optoelectronics, Department of Electrical Engineering and Center for Engineering Material and Advanced Devices National Taiwan University, Taipei 106-17, Taiwan (China)

Vibrational spectra of gas-source molecular beam epitaxy grown dilute InN{sub x}As{sub 1-x}/InP (001) alloys are obtained using a Fourier-transform infrared (IR) spectroscopy. A triply degenerate N{sub As} local vibrational mode of T{sub d}-symmetry is observed near 438 cm{sup -1} corresponding to the In-N bond energy. The analysis of composition dependent infrared reflectivity spectra in InNAs has predicted a two-phonon-mode behavior. In In(Ga)-rich GaInNAs alloys the observed splitting of the N{sub As} local mode into a doublet for the N{sub As}-Ga{sub 1}(In{sub 1})In{sub 3}(Ga{sub 3}) pair-defect of C{sub 3v}-symmetry is consistent with our simulated results based on a sophisticated Green's function theory.

OSTI ID:
22162726
Journal Information:
Applied Physics Letters, Vol. 102, Issue 5; Other Information: (c) 2013 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
Country of Publication:
United States
Language:
English