Photovoltaic properties of GaAs:Be nanowire arrays
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
- University Paris Sud 11, Institut d'Electronique Fondamentale UMR CNRS 8622 (France)
- CNRS, Laboratoire de Physique des Interfaces et des Couches Minces (LPICM), Ecole Polytechnique (France)
- University of Liverpool, Stephenson Institute for Renewable Energy (United Kingdom)
- Russian Academy of Sciences, St. Petersburg Academic University-Nanotechnology Research and Education Center (Russian Federation)
Arrays of GaAs:Be nanowires are synthesized by molecular beam epitaxy on GaAs(111)B substrates. Prototypes of photovoltaic converters in which the grown nanowire arrays are used as active layers are produced by means of successive photolithography, etching, and metallization processes. Studying the photovoltaic properties of the fabricated structures using a solar radiation simulator demonstrates that the solarenergy conversion efficiency is about 0.1%. The value of the efficiency recalculated with the area occupied by the p-type nanowires on the surface of the n-type GaAs substrate taken into account amounts to 1.1%.
- OSTI ID:
- 22126509
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 6 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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