Systematic study of near-infrared intersubband absorption of polar and semipolar GaN/AlN quantum wells
- Institut d'Electronique Fondamentale, Universite Paris-Sud, UMR 8622 CNRS, 91405 Orsay (France)
- CEA-CNRS Group Nanophysique et Semiconducteurs, INAC/SP2M/NPSC, CEA-Grenoble, 17 rue des Martyrs, 38054 Grenoble Cedex 9 (France)
- CIMAP, UMR 6252, CNRS-ENSICAEN-CEA-UCBN, 6 Bd Marechal Juin, 14050 Caen (France)
- CRHEA, UPR 10, 1 rue Bernard Gregory, Sophia Antipolis, 06560 Valbonne (France)
We report on the observation of intersubband absorption in GaN/AlN quantum well superlattices grown on (1122)-oriented GaN. The absorption is tuned in the 1.5-4.5 {mu}m wavelength range by adjusting the well thickness. The semipolar samples are compared with polar samples with identical well thickness grown during the same run. The intersubband absorption of semipolar samples shows a significant red shift with respect to the polar ones due to the reduction of the internal electric field in the quantum wells. The experimental results are compared with simulations and confirm the reduction of the polarization discontinuity along the growth axis in the semipolar case. The absorption spectral shape depends on the sample growth direction: for polar quantum wells the intersubband spectrum is a sum of Lorentzian resonances, whereas a Gaussian shape is observed in the semipolar case. This dissimilarity is explained by different carrier localization in these two cases.
- OSTI ID:
- 22102339
- Journal Information:
- Journal of Applied Physics, Vol. 113, Issue 14; Other Information: (c) 2013 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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