Near-infrared wavelength intersubband transitions in GaN/AlN short period superlattices

Journal Article · Mon Oct 09 04:00:00 EDT 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2358929· OSTI ID:20860976

DeCuir, Jr, E A; Fred, Emil; Passmore, B S; Muddasani, A; Manasreh, M O; Jinqiao, Xie; Morkoc, Hadis; Ware, M E; Salamo, G J ^[1]

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1. Department of Electrical Engineering, University of Arkansas, 3217 Bell Engineering Center, Fayetteville, Arkansas 72701 (United States)

Intersubband transitions in GaN/AlN short period superlattices prepared by molecular beam epitaxy were investigated using the optical absorption technique. The peak position wavelengths of these transitions are found to span the spectral range of 1.35-2.90 {mu}m for samples cut into 45 deg. waveguides with GaN quantum well thicknesses ranging between 1.70 and 2.41 nm. The Fermi energy levels are estimated from the carrier concentrations, which were measured using an electrochemical capacitance-voltage profiler. The well widths were inferred from comparing the measured peak position energy of the intersubband transitions and the bound state energy levels calculated using the transfer matrix method.

• OSTI ID: 20860976
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 15 Vol. 89; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABSORPTION
ALUMINIUM NITRIDES
BOUND STATE
CAPACITANCE
CARRIER DENSITY
CRYSTAL GROWTH
ELECTRIC POTENTIAL
FERMI LEVEL
GALLIUM NITRIDES
INFRARED SPECTRA
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUPERLATTICES
THICKNESS
TRANSFER FUNCTIONS
TRANSFER MATRIX METHOD
WAVEGUIDES
WAVELENGTHS