Near-infrared intersubband absorption in nonpolar cubic GaN/AlN superlattices

Journal Article · Mon Jul 23 04:00:00 EDT 2007 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2764557· OSTI ID:20972020

DeCuir, Jr, E A; Fred, E; Manasreh, M O; Schoermann, J; As, D J; Lischka, K ^[1]

---

1. Department of Electrical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 and Department of Physics, University of Arkansas, Fayetteville, Arkansas 7270 (United States)

Optical absorption spectra related to intersubband transitions in molecular beam epitaxially grown nonpolar cubic-GaN/AlN superlattices were observed in the spectral range of 1.5-2.00 {mu}m. The background doping was measured using an electrochemical capacitance-voltage technique and found to be on the order of 10{sup 18} cm{sup -3}. This doping level yields a Fermi energy level slightly above the ground state energy level enabling intersubband transitions to occur. The existence of the intersubband transition is verified in several samples with different well widths. The observed peak position energy of the intersubband transition is compared to those calculated using a transfer matrix method.

• OSTI ID: 20972020
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 4 Vol. 91; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION
ABSORPTION SPECTRA
ALUMINIUM NITRIDES
CRYSTAL GROWTH
ELECTROCHEMISTRY
FERMI LEVEL
GALLIUM NITRIDES
INFRARED SPECTRA
MOLECULAR BEAM EPITAXY
MOLECULAR BEAMS
SEMICONDUCTOR MATERIALS
SUPERLATTICES