Development of the sputtering yields of ArF photoresist after the onset of argon ion bombardment
Journal Article
·
· Journal of Applied Physics
- Graduate School of Engineering, Nagoya University, Nagoya 464-8603 (Japan)
- Research Group Reactive Plasmas, Ruhr-Universitaet at Bochum, Bochum 44780 (Germany)
Modification of an advanced ArF excimer lithographic photoresist by 400 eV Ar ion irradiation was observed in situ in real time using both infrared spectroscopy and a quartz microbalance sensor. The photoresist sputtering yields had a characteristic behavior; the sputtering yields were higher than unity at the beginning, until an ion dose of 2 Multiplication-Sign 10{sup 16} ions cm{sup -2}. Thereafter, the yields decreased immediately to almost zero and remained constant with the yield at zero until a dose of approximately 4 Multiplication-Sign 10{sup 16} ions cm{sup -2} was reached. At larger doses, the yields increased again and reached a steady-state value of approximately 0.6. This development of the sputtering yield after the onset of ion bombardment is explained by an ion-induced modification of the photoresist that includes preferential sputtering of individual groups, argon ion implantation and the generation of voids. All these effects must be taken into account to assess line-edge-roughness on a photoresist subjected to highly energetic ion irradiation.
- OSTI ID:
- 22089673
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 113; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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