Ion dose dependence of the sputtering yield of Ru(0001) at very low fluences

Journal Article · Mon Jul 31 04:00:00 EDT 1989 · Phys. Rev. Lett.; (United States)

DOI:https://doi.org/10.1103/PhysRevLett.63.562· OSTI ID:5806948

Burnett, J W; Pellin, M J; Calaway, W F; Gruen, D M

The neutral sputtered flux from a Ru single crystal oriented along the (0001) axis has been determined as a function of primary ion dose in real time using nonresonant photoionization techniques coupled with time-of-flight mass spectrometry. The data reveal, surprisingly, that the sputtering yield is twice as large from an undamaged surface as that from a slightly damaged surface. The sputtering yield decreases until steady state is reached at a primary ion fluence of only 2/times/10/sup 15/ ions cm/sup /minus/2/. Data analysis results in an estimated cross section for damage of (2.7/plus minus/1.0)/times/10/sup /minus/15/ cm/sup 2/.

• Research Organization: Materials Science and Chemistry Divisions, Argonne National Laboratory, Argonne, Illinois 60439 (US); Department of Chemistry, Surface Science Center, University of Pittsburgh, Pittsburgh, Pennsylvania 15260
• DOE Contract Number: W-31109-ENG-38
• OSTI ID: 5806948
• Journal Information: Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 63:5; ISSN PRLTA
• Country of Publication: United States
• Language: English

Related Subjects

656003* -- Condensed Matter Physics-- Interactions between Beams & Condensed Matter-- (1987-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CRYSTALS
DOSE RATES
ELEMENTS
INHIBITION
IONIZATION
MASS SPECTRA
METALS
MONOCRYSTALS
PHOTOIONIZATION
PLATINUM METALS
RUTHENIUM
SPECTRA
SPUTTERING
STEADY-STATE CONDITIONS
TIME DEPENDENCE
TIME-OF-FLIGHT METHOD
TRANSITION ELEMENTS
YIELDS