Effects of oxygen on electron beam induced deposition of SiO{sub 2} using physisorbed and chemisorbed tetraethoxysilane

Journal Article · Mon Nov 19 00:00:00 EST 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4767521· OSTI ID:22089514

Bishop, James; Toth, Milos; Phillips, Matthew; Lobo, Charlene ^[1]

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1. School of Physics and Advanced Materials, University of Technology, Sydney, P.O. Box 123, Broadway, New South Wales 2007 (Australia)

Electron beam induced deposition (EBID) is limited by low throughput and purity of as-grown material. Co-injection of O{sub 2} with the growth precursor is known to increase both the purity and deposition rate of materials such as SiO{sub 2} at room temperature. Here, we show that O{sub 2} inhibits rather than enhances EBID from tetraethoxysilane (TEOS) precursor at elevated temperatures. This behavior is attributed to surface site competition between chemisorbates at elevated temperature, and TEOS decomposition by atomic oxygen produced through electron dissociation of physisorbed O{sub 2} at room temperature.

• OSTI ID: 22089514
• Journal Information: Applied Physics Letters, Vol. 101, Issue 21; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ADSORPTION
CHEMISORPTION
DECOMPOSITION
DEPOSITION
DISSOCIATION
ELECTRON BEAMS
IMPURITIES
OXYGEN
PRECURSOR
SILICA
SILICON OXIDES
SURFACES
TEMPERATURE RANGE 0273-0400 K