SiO/sub 2/ deposition kinetics for tetraethoxysilane in a horizontal cylindrical reactor

Journal Article · Tue Mar 01 00:00:00 EST 1988 · Inorg. Mater. (Engl. Transl.); (United States)

OSTI ID:6052532

Pipov, V P; Minkina, V G

The authors have simulated SiO/sub 2/ deposition in the pyrolysis of tetraethoxysilane (TEOS), where they derive a criterion giving the dependence of the deposition rate on major factors from the input data, i.e., before measurement. They consider SiO/sub 2/ deposition from TEOS in argon in a horizontal cylindrical reactor at 770-1070 K. The differential-equation system contains ones for the continuity, momentum, energy, and mass of the components in the boundary-layer approximation.

• Research Organization: A.V. Lykov Institute of Heat and Mass Transfer (USSR)
• OSTI ID: 6052532
• Journal Information: Inorg. Mater. (Engl. Transl.); (United States), Vol. 23:10; Other Information: Translated from Izv. Akad. Nauk SSSR, Neorg. Mater.; 23, No. 10, 1674-1677 (Oct 1987)
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC
ORGANIC
PHYSICAL AND ANALYTICAL CHEMISTRY
SILANES
PYROLYSIS
SILICON OXIDES
CHEMICAL VAPOR DEPOSITION
ACTIVATION ENERGY
BOUNDARY CONDITIONS
CHEMICAL REACTION KINETICS
CHEMICAL REACTORS
DIFFERENTIAL EQUATIONS
MATHEMATICAL MODELS
VAPOR PHASE EPITAXY
CHALCOGENIDES
CHEMICAL COATING
CHEMICAL REACTIONS
DECOMPOSITION
DEPOSITION
ENERGY
EPITAXY
EQUATIONS
HYDRIDES
HYDROGEN COMPOUNDS
KINETICS
ORGANIC COMPOUNDS
ORGANIC SILICON COMPOUNDS
OXIDES
OXYGEN COMPOUNDS
REACTION KINETICS
SILICON COMPOUNDS
SURFACE COATING
THERMOCHEMICAL PROCESSES
360202* - Ceramics
Cermets
& Refractories- Structure & Phase Studies
400800 - Combustion
Pyrolysis
& High-Temperature Chemistry