In-plane dielectric properties of epitaxial Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown on GaAs for tunable device application
- Department of Applied Physics and Materials Research Centre, Hong Kong Polytechnic University (Hong Kong)
We have epitaxially deposited ferroelectric Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) thin films grown on GaAs substrate via SrTiO{sub 3} buffer layer by laser molecular beam epitaxy. Structural characteristics of the heterostructure were measured by various techniques. The in-plane dielectric properties of the heteroepitaxial structure under different applying frequency were investigated from -190 to 90 Degree-Sign C, indicating Curie temperature of the BST film to be around 52 Degree-Sign C. At room temperature, the dielectric constant of the heterostructure under moderate dc bias field can be tuned by more than 30% and K factor used for frequency agile materials is found to be close to 8. Our results offer the possibility to combine frequency agile electronics of ferroelectric titanate with the high-performance microwave capabilities of GaAs for room temperature tunable device application.
- OSTI ID:
- 22089433
- Journal Information:
- Journal of Applied Physics, Vol. 112, Issue 5; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
BARIUM COMPOUNDS
BUFFERS
CURIE POINT
ENERGY BEAM DEPOSITION
FERROELECTRIC MATERIALS
GALLIUM ARSENIDES
LASER RADIATION
LAYERS
MICROWAVE RADIATION
MOLECULAR BEAM EPITAXY
PERMITTIVITY
PULSED IRRADIATION
STRONTIUM COMPOUNDS
SUBSTRATES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TITANATES