Structural and dielectric properties of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} thin films grown by PLD

Journal Article · Tue Jan 28 04:00:00 EST 2014 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4862023· OSTI ID:22264015

James, K. K.; Satish, B.; Jayaraj, M. K. ^[1]

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1. Nanophotonic and Optoelectronic Devices Laboratory, Department of Physics, Cochin University of Science and Technology, Kerala (India)

Ferroelectric thin films of Ba{sub 0.7}Sr{sub 0.3}TiO{sub 3} (BST) were deposited on Si/SiO{sub 2}/TiO{sub 2}/Pt (PtSi) substrate by pulsed laser deposition (PLD). Crystalline films with perovskite structure were obtained without post-deposition annealing. Phase purity of the deposited films was confirmed by x-ray diffraction. The lowest value of FWHM obtained for the film deposited at oxygen pressure 5.4×10{sup −4} mbar and substrate temperature 600°C, indicates the high crystallinity of the film. The room temperature dielectric constant at 100 kHz was 85. Butterfly loop, which is the characteristic of ferroelectric materials, was obtained in the regime of −4 to +4V. The leakage current density was nearly 9×10{sup −13} Acm{sup −2}.

• OSTI ID: 22264015
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1576; ISSN APCPCS; ISSN 0094-243X
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANNEALING
DENSITY
DEPOSITS
ENERGY BEAM DEPOSITION
FERROELECTRIC MATERIALS
LASER RADIATION
LEAKAGE CURRENT
OXYGEN
PERMITTIVITY
PEROVSKITE
PULSED IRRADIATION
SILICA
SILICON OXIDES
SUBSTRATES
THIN FILMS
TITANIUM OXIDES
X-RAY DIFFRACTION