Formation of manganese {delta}-doped atomic layer in wurtzite GaN

Journal Article · Sat Sep 01 04:00:00 EDT 2012 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4750034· OSTI ID:22089426

Meng, Shi; Chinchore, Abhijit; Kangkang, Wang; Mandru, Andrada-Oana; Yinghao, Liu; Smith, Arthur R. ^[1]

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1. Department of Physics and Astronomy, Nanoscale and Quantum Phenomena Institute, Ohio University, Athens, Ohio 45701 (United States)

We describe the formation of a {delta}-doped manganese layer embedded within c-plane wurtzite gallium nitride using a special molecular beam epitaxy growth process. Manganese is first deposited on the gallium-poor GaN (0001) surface, forming a {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign reconstructed phase. This well-defined surface reconstruction is then nitrided using plasma nitridation, and gallium nitride is overgrown. The manganese content of the {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign phase, namely one Mn per each {radical}(3) Multiplication-Sign {radical}(3)-R30 Degree-Sign unit cell, implies that the MnGaN alloy layer has a Mn concentration of up to 33%. The structure and chemical content of the surface are monitored beginning from the initial growth stage up through the overgrowth of 20 additional monolayers (MLs) of GaN. An exponential-like drop-off of the Mn signal with increasing GaN monolayers, as measured by Auger electron spectroscopy, indicates that the highly concentrated Mn layer remains at the {delta}-doped interface. A model of the resultant {delta}-doped structure is formulated based on the experimental data, and implications for possible spintronic applications are discussed.

• OSTI ID: 22089426
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 5 Vol. 112; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALLOYS
AUGER ELECTRON SPECTROSCOPY
DOPED MATERIALS
GALLIUM NITRIDES
INTERFACES
LAYERS
MANGANESE ADDITIONS
MOLECULAR BEAM EPITAXY
NITRIDATION
SEMICONDUCTOR MATERIALS
SURFACES