Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties
- NaMLab gGmbH, 01187 Dresden (Germany)
- Fraunhofer CNT, 01099 Dresden (Germany)
- Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany)
Thin film capacitors were fabricated by sputtering TiN-Y doped HfO{sub 2}-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO{sub 2} layers by simultaneously sputtering from Y{sub 2}O{sub 3} and HfO{sub 2} sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.
- OSTI ID:
- 22089397
- Journal Information:
- Applied Physics Letters, Vol. 101, Issue 8; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films
Chemical solution deposition of ferroelectric yttrium-doped hafnium oxide films on platinum electrodes