Co-sputtering yttrium into hafnium oxide thin films to produce ferroelectric properties

Journal Article · Mon Aug 20 04:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4747209· OSTI ID:22089397

Olsen, T. ^[1]; Schroeder, U.; Mueller, S.; Krause, A.; Martin, D.; Singh, A. ^[1]; Mueller, J. ^[2]; Geidel, M. ^[3]; Mikolajick, T. ^[1]

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1. NaMLab gGmbH, 01187 Dresden (Germany)
2. Fraunhofer CNT, 01099 Dresden (Germany)
3. Institute of Semiconductors and Microsystems, Technische Universitaet Dresden, 01062 Dresden (Germany)

Thin film capacitors were fabricated by sputtering TiN-Y doped HfO{sub 2}-TiN stacks on silicon substrates. Yttrium was incorporated into the HfO{sub 2} layers by simultaneously sputtering from Y{sub 2}O{sub 3} and HfO{sub 2} sources. Electric polarization and relative permittivity measurements yield distinct ferroelectric properties as a result of low yttrium dopant concentrations in the range of 0.9-1.9 mol. %. Grazing incidence x-ray diffraction measurements show the formation of an orthorhombic phase in this range. Compared to atomic layer deposition films, the highest remanent polarization and the highest relative permittivity were obtained at significantly lower doping concentrations in these sputtered films.

• OSTI ID: 22089397
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 8 Vol. 101; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITORS
DEPOSITION
DOPED MATERIALS
FERROELECTRIC MATERIALS
HAFNIUM OXIDES
LAYERS
ORTHORHOMBIC LATTICES
PERMITTIVITY
POLARIZATION
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
TITANIUM NITRIDES
X-RAY DIFFRACTION
YTTRIUM ADDITIONS
YTTRIUM OXIDES