The effects of layering in ferroelectric Si-doped HfO{sub 2} thin films

Journal Article · Mon Aug 18 04:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4893738· OSTI ID:22310900

Lomenzo, Patrick D.; Nishida, Toshikazu ^[1]; Takmeel, Qanit; Moghaddam, Saeed ^[2]; Zhou, Chuanzhen; Liu, Yang; Fancher, Chris M.; Jones, Jacob L. ^[3]

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1. Department of Electrical and Computer Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Department of Mechanical and Aerospace Engineering, University of Florida, Gainesville, Florida 32611 (United States)
3. Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27696-7907 (United States)

Atomic layer deposited Si-doped HfO{sub 2} thin films approximately 10 nm thick are deposited with various Si-dopant concentrations and distributions. The ferroelectric behavior of the HfO{sub 2} thin films are shown to be dependent on both the Si mol. % and the distribution of Si-dopants. Metal-ferroelectric-insulator-semiconductor capacitors are shown to exhibit a tunable remanent polarization through the adjustment of the Si-dopant distribution at a constant Si concentration. Inhomogeneous layering of Si-dopants within the thin films effectively lowers the remanent polarization. A pinched hysteresis loop is observed for higher Si-dopant concentrations and found to be dependent on the Si layering distribution.

• OSTI ID: 22310900
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 7 Vol. 105; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITORS
DEPOSITION
DISTRIBUTION
DOPED MATERIALS
FERROELECTRIC MATERIALS
HAFNIUM OXIDES
HYSTERESIS
LAYERS
METALS
POLARIZATION
SEMICONDUCTOR MATERIALS
SILICON ADDITIONS
THIN FILMS