Electrodeposition of In-Se, Cu-Se, and Cu-In-Se thin films

Journal Article · Fri Mar 01 04:00:00 EST 1996 · Journal of the Electrochemical Society

DOI:https://doi.org/10.1149/1.1836548· OSTI ID:220865

Bhattacharya, R N; Fernandez, A M; Contreras, M A; Keane, J; Tennant, A L; Ramanathan, K; Tuttle, J R; Noufi, R N; Hermann, A M ^[1]

---

1. National Renewable Energy Lab., Golden, CO (United States)

Indium-selenium, copper-selenium, and copper-indium-selenium thin films have been prepared by electrodeposition techniques on molybdenum substrates. Electrodeposited precursors are prepared at varying potentials, pH, and deposition times. The adhesion and uniformity of indium selenide on molybdenum substrates are improved by electrodepositing an initial copper layer (500 {angstrom}) on molybdenum. The films (In-Se, Cu-Se, and Cu-In-Se) are annealed at 250 and 450 C in Ar for 15 min and are slow-cooled (3 C/min). The films are characterized by electron microprobe analysis, inductive-coupled plasma spectrometry, X-ray diffraction analysis, Auger electron spectroscopy, and scanning electron microscopy. The as-deposited precursor films are loaded in a physical evaporation chamber and addition In or Cu and Se are added to the film to adjust the final composition to CuInSe{sub 2}. The device fabricated using electrodeposited Cu-In-Se precursor layers resulted in a solar cell efficiency of 9.4%.

• Sponsoring Organization: USDOE
• OSTI ID: 220865
• Journal Information: Journal of the Electrochemical Society, Journal Name: Journal of the Electrochemical Society Journal Issue: 3 Vol. 143; ISSN JESOAN; ISSN 0013-4651
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
36 MATERIALS SCIENCE
COPPER SELENIDE SOLAR CELLS
COPPER SELENIDES
ELECTRODEPOSITED COATINGS
ELECTRODEPOSITION
ENERGY EFFICIENCY
ENERGY GAP
FABRICATION
INDIUM SELENIDE SOLAR CELLS
INDIUM SELENIDES
MOLYBDENUM