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Title: Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells

Patent ·
OSTI ID:872149

A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.

Research Organization:
National Renewable Energy Laboratory (NREL), Golden, CO (United States)
DOE Contract Number:
1326
Assignee:
Davis, Joseph & Negley (Austin, TX)
Patent Number(s):
US 5871630
Application Number:
08/870,081
OSTI ID:
872149
Country of Publication:
United States
Language:
English

References (11)

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Low cost methods for the production of semiconductor films for CuInSe2/CdS solar cells journal June 1987
Accelerated publication 17.1% efficient Cu(In,Ga)Se 2 -based thin-film solar cell journal January 1995
Device quality thin films of CuInSe2 by a one-step electrodeposition process journal May 1988
Preparation and Characterization of Electrodeposited CuInSe 2 Thin Films journal April 1993
Optical properties of electrochemically deposited CuInSe2 thin films journal November 1991