Preparation of copper-indium-gallium-diselenide precursor films by electrodeposition for fabricating high efficiency solar cells
Patent
·
OSTI ID:872149
- Littleton, CO
- Arvada, CO
- Golden, CO
- Lakewood, CO
A photovoltaic cell exhibiting an overall conversion efficiency of 13.6% is prepared from a copper-indium-gallium-diselenide precursor thin film. The film is fabricated by first simultaneously electrodepositing copper, indium, gallium, and selenium onto a glass/molybdenum substrate (12/14). The electrodeposition voltage is a high frequency AC voltage superimposed upon a DC voltage to improve the morphology and growth rate of the film. The electrodeposition is followed by physical vapor deposition to adjust the final stoichiometry of the thin film to approximately Cu(In.sub.1-n Ga.sub.x)Se.sub.2, with the ratio of Ga/(In+Ga) being approximately 0.39.
- Research Organization:
- National Renewable Energy Laboratory (NREL), Golden, CO (United States)
- DOE Contract Number:
- 1326
- Assignee:
- Davis, Joseph & Negley (Austin, TX)
- Patent Number(s):
- US 5871630
- Application Number:
- 08/870,081
- OSTI ID:
- 872149
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
preparation
copper-indium-gallium-diselenide
precursor
films
electrodeposition
fabricating
efficiency
solar
cells
photovoltaic
cell
exhibiting
overall
conversion
13
prepared
film
fabricated
simultaneously
electrodepositing
copper
indium
gallium
selenium
glass
molybdenum
substrate
12
14
voltage
frequency
superimposed
dc
improve
morphology
growth
rate
followed
physical
vapor
deposition
adjust
final
stoichiometry
approximately
cu
1-n
ratio
39
efficiency solar
precursor film
precursor films
growth rate
conversion efficiency
solar cell
solar cells
vapor deposition
dc voltage
physical vapor
photovoltaic cell
/205/136/
copper-indium-gallium-diselenide
precursor
films
electrodeposition
fabricating
efficiency
solar
cells
photovoltaic
cell
exhibiting
overall
conversion
13
prepared
film
fabricated
simultaneously
electrodepositing
copper
indium
gallium
selenium
glass
molybdenum
substrate
12
14
voltage
frequency
superimposed
dc
improve
morphology
growth
rate
followed
physical
vapor
deposition
adjust
final
stoichiometry
approximately
cu
1-n
ratio
39
efficiency solar
precursor film
precursor films
growth rate
conversion efficiency
solar cell
solar cells
vapor deposition
dc voltage
physical vapor
photovoltaic cell
/205/136/