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Title: Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells

Abstract

High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.

Inventors:
 [1];  [2];  [3];  [4];  [4];  [3];  [2]
  1. Littleton, CO
  2. Golden, CO
  3. Lakewood, CO
  4. Denver, CO
Publication Date:
Research Org.:
National Renewable Energy Lab. (NREL), Golden, CO (United States)
OSTI Identifier:
871430
Patent Number(s):
US 5730852
Application Number:
08/571,150
Assignee:
Davis, Joseph & Negley (Austin, TX)
DOE Contract Number:  
1326
Resource Type:
Patent
Country of Publication:
United States
Language:
English
Subject:
preparation; cuxinygazsen; 0-2; z; 0-3; precursor; films; electrodeposition; fabricating; efficiency; solar; cells; quality; copper-indium-gallium-diselenide; useful; production; prepared; electrodepositing; constituent; metals; glass; substrate; followed; physical; vapor; deposition; copper; selenium; indium; adjust; final; stoichiometry; film; approximately; cu; voltage; 1-100; khz; combination; dc; improves; morphology; growth; rate; deposited; solution; comprising; organic; solvent; conjunction; increased; cathodic; potential; increase; gallium; content; electrodeposited; efficiency solar; precursor film; precursor films; growth rate; organic solvent; solar cell; solar cells; vapor deposition; dc voltage; solution comprising; physical vapor; constituent metal; /205/136/427/438/

Citation Formats

Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, and Noufi, Rommel. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells. United States: N. p., 1998. Web.
Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, & Noufi, Rommel. Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells. United States.
Bhattacharya, Raghu N, Contreras, Miguel A, Keane, James, Tennant, Andrew L, Tuttle, John R, Ramanathan, Kannan, and Noufi, Rommel. Tue . "Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells". United States. https://www.osti.gov/servlets/purl/871430.
@article{osti_871430,
title = {Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells},
author = {Bhattacharya, Raghu N and Contreras, Miguel A and Keane, James and Tennant, Andrew L and Tuttle, John R and Ramanathan, Kannan and Noufi, Rommel},
abstractNote = {High quality thin films of copper-indium-gallium-diselenide useful in the production of solar cells are prepared by electrodepositing at least one of the constituent metals onto a glass/Mo substrate, followed by physical vapor deposition of copper and selenium or indium and selenium to adjust the final stoichiometry of the thin film to approximately Cu(In,Ga)Se.sub.2. Using an AC voltage of 1-100 KHz in combination with a DC voltage for electrodeposition improves the morphology and growth rate of the deposited thin film. An electrodeposition solution comprising at least in part an organic solvent may be used in conjunction with an increased cathodic potential to increase the gallium content of the electrodeposited thin film.},
doi = {},
journal = {},
number = ,
volume = ,
place = {United States},
year = {1998},
month = {3}
}

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