Donor and acceptor levels in ZnO homoepitaxial thin films grown by molecular beam epitaxy and doped with plasma-activated nitrogen

Journal Article · Mon Sep 17 00:00:00 EDT 2012 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4751857· OSTI ID:22080447

Muret, Pierre ^[1]; Tainoff, Dimitri; Morhain, Christian ^[2]; Chauveau, Jean-Michel ^[2]

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1. Departement Nanosciences, Institut Neel, CNRS, BP166, 38042 Grenoble and Universite Joseph Fourier, Grenoble (France)
2. Centre de Recherche sur l'HeteroEpitaxie et ses Applications, rue Bernard Gregory, CNRS, 06500 Valbonne (France)

Deep level transient spectroscopy of both majority and minority carrier traps is performed in a n-type, nitrogen doped homoepitaxial ZnO layer grown on a m-plane by molecular beam epitaxy. Deep levels, most of them being not detected in undoped ZnO, lie close to the band edges with ionization energies in the range 0.12-0.60 eV. The two hole traps with largest capture cross sections are likely acceptors, 0.19 and 0.48 eV from the valence band edge, able to be ionized below room temperature. These results are compared with theoretical predictions and other experimental data.

• OSTI ID: 22080447
• Journal Information: Applied Physics Letters, Vol. 101, Issue 12; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ACTIVATION ENERGY
CARRIERS
CROSS SECTIONS
DEEP LEVEL TRANSIENT SPECTROSCOPY
DOPED MATERIALS
HOLES
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN ADDITIONS
PLASMA
SEMICONDUCTOR MATERIALS
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRAPS
ZINC OXIDES