Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE
- Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)
GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.
- OSTI ID:
- 22069033
- Journal Information:
- AIP Conference Proceedings, Vol. 1455, Issue 1; Conference: AMSN 2010: 2. ASEAN-APCTP workshop on advanced materials science and nanotechnology, Penang (Malaysia), 21-23 Dec 2010; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM NITRIDES
CHEMICAL VAPOR DEPOSITION
CRYSTAL GROWTH
GALLIUM NITRIDES
LAYERS
MOLECULAR BEAM EPITAXY
NITROGEN
PHONONS
PLASMA
P-N JUNCTIONS
RAMAN SPECTRA
SEMICONDUCTOR MATERIALS
SILICON
SUBSTRATES
VACANCIES
X-RAY DIFFRACTION