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Title: Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE

Abstract

GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.

Authors:
; ; ; ;  [1];  [2]
  1. Nano-Optoelectronics Research and Technology Laboratory School of Physics, Universiti Sains Malaysia, 11800 Penang, Malaysia and Department of Applied Sciences Universiti Teknologi MARA (UiTM) 13500 Permatang Pauh, Penang (Malaysia)
  2. (UiTM) 13500 Permatang Pauh, Penang (Malaysia)
Publication Date:
OSTI Identifier:
22069033
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1455; Journal Issue: 1; Conference: AMSN 2010: 2. ASEAN-APCTP workshop on advanced materials science and nanotechnology, Penang (Malaysia), 21-23 Dec 2010; Other Information: (c) 2012 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; GALLIUM NITRIDES; LAYERS; MOLECULAR BEAM EPITAXY; NITROGEN; PHONONS; PLASMA; P-N JUNCTIONS; RAMAN SPECTRA; SEMICONDUCTOR MATERIALS; SILICON; SUBSTRATES; VACANCIES; X-RAY DIFFRACTION

Citation Formats

Yusoff, Mohd Zaki Mohd, Hassan, Zainuriah, Woei, Chin Che, Hassan, Haslan Abu, Abdullah, Mat Johar, and Department of Applied Sciences Universiti Teknologi MARA. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE. United States: N. p., 2012. Web. doi:10.1063/1.4732503.
Yusoff, Mohd Zaki Mohd, Hassan, Zainuriah, Woei, Chin Che, Hassan, Haslan Abu, Abdullah, Mat Johar, & Department of Applied Sciences Universiti Teknologi MARA. Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE. United States. doi:10.1063/1.4732503.
Yusoff, Mohd Zaki Mohd, Hassan, Zainuriah, Woei, Chin Che, Hassan, Haslan Abu, Abdullah, Mat Johar, and Department of Applied Sciences Universiti Teknologi MARA. Fri . "Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE". United States. doi:10.1063/1.4732503.
@article{osti_22069033,
title = {Structural and optical studies of GaN pn-junction with AlN buffer layer grown on Si (111) by RF plasma enhanced MBE},
author = {Yusoff, Mohd Zaki Mohd and Hassan, Zainuriah and Woei, Chin Che and Hassan, Haslan Abu and Abdullah, Mat Johar and Department of Applied Sciences Universiti Teknologi MARA},
abstractNote = {GaN pn-junction grown on silicon substrates have been the focus in a number of recent reports and further effort is still necessary to improve its crystalline quality for practical applications. GaN has the high n-type background carrier concentration resulting from native defects commonly thought to be nitrogen vacancies. In this work, we present the growth of pn-junction of GaN on Si (111) substrate using RF plasma-enhanced molecular beam epitaxy (MBE). Both of the layers show uniformity with an average thickness of 0.709 {mu}m and 0.095 {mu}m for GaN and AlN layers, respectively. The XRD spectra indicate that no sign of cubic phase of GaN are found, so it is confirmed that the sample possessed hexagonal structure. It was found that all the allowed Raman optical phonon modes of GaN, i.e. the E2 (low), E1 (high) and A1 (LO) are clearly visible.},
doi = {10.1063/1.4732503},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1455,
place = {United States},
year = {2012},
month = {6}
}