Fabrication of GaN nanowires on Pd-coated sapphire substrates by magnetron sputtering technique

Journal Article · Thu Apr 15 04:00:00 EDT 2010 · Materials Characterization

DOI:https://doi.org/10.1016/J.MATCHAR.2010.01.001· OSTI ID:22066196

Guo, Y F ^[1]; Liu, W J; Sun, H B; Cao, Y P ^[1]

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1. Institute of Semiconductors, Shandong Normal University, Ji nan 250014 (China)

Large-scale GaN nanowires were successfully synthesized through ammoniating Ga{sub 2}O{sub 3}/Pd films sputtered on the sapphire(001) substrates. X-ray diffraction, scanning electron microscopy, high-resolution transmission electron microscopy, photoluminescence and Raman spectrum were used to characterize the specimens. The results demonstrate that nanowires are single crystal with hexagonal wurtzite structure and have good optical properties. Raman scattering appears broadened and asymmetric compared with those of bulk GaN due to its polycrystalline nature. In addition, the growth mechanism of GaN nanowires is briefly discussed.

• OSTI ID: 22066196
• Journal Information: Materials Characterization, Journal Name: Materials Characterization Journal Issue: 4 Vol. 61; ISSN 1044-5803; ISSN MACHEX
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
CRYSTAL GROWTH
FABRICATION
GALLIUM NITRIDES
GALLIUM OXIDES
HEXAGONAL LATTICES
MONOCRYSTALS
OPTICAL PROPERTIES
PALLADIUM
PHOTOLUMINESCENCE
POLYCRYSTALS
QUANTUM WIRES
RAMAN SPECTRA
SAPPHIRE
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SPUTTERING
SUBSTRATES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION