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Title: Temperature dependent growth of GaN nanowires using CVD technique

Abstract

Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.

Authors:
;  [1];  [2]
  1. Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi - 110016 (India)
  2. Centre For Applied Research in Electronics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi - 110016 (India)
Publication Date:
OSTI Identifier:
22606278
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 1731; Journal Issue: 1; Conference: DAE solid state physics symposium 2015, Uttar Pradesh (India), 21-25 Dec 2015; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; CATALYSTS; CHEMICAL VAPOR DEPOSITION; GALLIUM NITRIDES; NANOWIRES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SPECTRA; SUBSTRATES; TEMPERATURE DEPENDENCE; X-RAY DIFFRACTION

Citation Formats

Kumar, Mukesh, Singh, R., and Kumar, Vikram. Temperature dependent growth of GaN nanowires using CVD technique. United States: N. p., 2016. Web. doi:10.1063/1.4947682.
Kumar, Mukesh, Singh, R., & Kumar, Vikram. Temperature dependent growth of GaN nanowires using CVD technique. United States. doi:10.1063/1.4947682.
Kumar, Mukesh, Singh, R., and Kumar, Vikram. Mon . "Temperature dependent growth of GaN nanowires using CVD technique". United States. doi:10.1063/1.4947682.
@article{osti_22606278,
title = {Temperature dependent growth of GaN nanowires using CVD technique},
author = {Kumar, Mukesh and Singh, R. and Kumar, Vikram},
abstractNote = {Growth of GaN nanowires have been carried out on sapphire substrates with Au as a catalyst using chemical vapour deposition technique. GaN nanowires growth have been studied with the experimental parameter as growth temperature. Diameter of grown GaN nanowires are in the range of 50 nm to 100 nm while the nanowire length depends on growth temperature. Morphology of the GaN nanowires have been studied by scanning electron microscopy. Crystalline nature has been observed by XRD patterns. Optical properties of grown GaN nanowires have been investigated by photoluminescence spectra.},
doi = {10.1063/1.4947682},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 1731,
place = {United States},
year = {2016},
month = {5}
}